Abstract

We use the flux method of McKelvey, Longini, and Brody [Physical Review 123, 51 (1961)] to analyze current blocking in double heterostructure bipolar transistors (DHBTs) with composite collectors (CC). We include the effects of electron accumulation in the spacer layer in the collector, and show that this accumulation has severe effects at higher currents, imposing an intrinsic limit on the simplest CC design. We compare the results from the flux method with drift-diffusion simulations and measurements on InP/InGaAs/InP CC-DHBTs.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.