Abstract
One-dimensional antiphase structures with average domain sizes of non-integral multiples (M=1.33-1.91) of the basic Ll2 cell, existing in the Al3-xTi1+x(0<x<1/3), have been studied by high-resolution electron microscopy and X-ray powder diffraction. The mixing mode of M=1 and M=2 domains is revealed and the nature of lattice modulation associated with an antiphase structure is clarified. Ti atoms and Al-rich “statistical” atoms bordering on the antiphase boundaries are displaced away from and towards the boundary, respectively. The amounts of displacement are estimated on the basis of X-ray intensities. It is revealed that the Al2Ti appearing in the Al3-xTi1+x contains a small amount of Ga2Zr-type modification in the form of faulted zones within a matrix Ga2Hf-type structure. The nature of displacement modulation existing in the stoichiometric Al2Ti is also clarified.
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