Abstract
SnO2-core/Ga2O3-shell nanowires were synthesized by one-step thermal evaporation of a mixture of SnO2, GaN and graphite powders at 1000°C. Transmission electron microscopy and energy-dispersive X-ray spectroscopy concentration profiles of Sn, Ga, and O across the diameter of the nanowire indicated clearly that the nanowire consisted of a single crystal SnO2 core and a single crystal Ga2O3 shell with a shell layer thickness of ∼20nm. A possible growth mechanism of SnO2-core/Ga2O3-shell nanowires in the one-step synthesis process is proposed.
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