Abstract

Alloying is an effective way to modulate material's properties. In particular, graded alloying within a single domain of two-dimensional transition-metal chalcogenide (2D-TMC) is of great technological importance, for example, for achieving band gap modulations. Here, we report a facile method to grow gradient alloying of Mo1- xW xS2 monolayers with large domain sizes and high crystal qualities via the chemical vapor deposition technique. The as-grown Mo1- xW xS2 monolayers have a gradient composition of W from x = ∼0 to ∼1 in a single domain with a lateral dimension up to 300 μm, and the span in band gap can be readily tuned. Owing to the grading in band offsets, the compositionally graded Mo1- xW xS2 alloy monolayer demonstrates an excellent rectifying effect with the ratio of forward to reverse current up to ∼104. Moreover, phototransistors based on the compositionally graded Mo1- xW xS2 monolayers exhibit a high responsivity up to 298.4 A/W in the visible light regime, and particularly a decent responsivity of 28.7 A/W in the near-infrared regime. The control of band gap offset gradient and span in alloyed 2D-TMC semiconductors provides an additional degree of freedom in designing fascinating applications in achieving multifunctional optoelectronic devices on individual substrates.

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.