Abstract
CuGaSe2 thin films have been prepared by one-step electrodeposition and rapid thermal annealing process. According to composition and morphology analysis, deposition potential of −0.6V vs. SCE is considered to be optimum for electrodeposition. From the X-ray diffraction and Raman studies, the as-deposited film exhibits poor crystallinity without the evidence of CuGaSe2 or other Ga-containing phases, while the rapid thermal annealing-treated film shows chalcopyrite structure CuGaSe2 phase containing MoSe2 phase between the Mo substrate and the absorber and minor second phase Cu2−xSe. The obtained CuGaSe2 thin film has a band gap of about 1.68eV and p-type conductivity.
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