Abstract
Low-Power Memory Ferroelectric Si-compatible hafnium oxide is attractive for emerging low-power memory considering its voltage-switchable electric polarization, exemplified in article number 2100499 by Suraj S. Cheema, Sayeef Salahuddin, and co-workers by 1 nm ferroelectric tunnel junctions on Si that overcome a key traditional trade-off: simulatenous ultrahigh read current and electroresistance.
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