Abstract
A non intrusive temperature sensing based performance compensation of an integrated CMOS power amplifier is presented here. A differential-amplifier based temperature sensor, having an area of 25µm x 25µm, is used to measure the temperature around the RF circuits. The sources of temperature increase are analysed and their contribution to self heating are presented. The effects of self heating and thermal coupling in RF circuits is demonstrated using an power amplifier. The integrated Class-E power amplifier was designed in 0.13µm CMOS Mixed Mode/RF process. The PA output variation due to self heating was reduced by 40%. The technique shows promise for compensation and correction in high frequency operating systems like millimeter-wave circuits where variations due to self-heating can vary the functional operation greatly.
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