Abstract
This letter proposes a new sensor circuit to measure on-chip low-frequency temperature changes that have information about electrical high-frequency figures of merit of a radio frequency (RF) circuit. The proposed sensor circuit uses a metal-oxide-semiconductor field-effect transistor (MOSFET) as a temperature sensing device, which is then connected to a band-pass filter that amplifies the low-frequency temperature signal generated by the RF circuit under test (CUT). Simulations in 65 nm CMOS technology show that such a sensor circuit can extract the center frequency (2.47 GHz) of a RF power amplifier (PA) by measuring on-chip temperature changes at 1 kHz.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
