Abstract
The problems associated with the efficiency of the thermoelectric converters, created on the basis of using the nanowires, superlattices and quantum dots, were considered. The particular attention devoted the role of the intrinsic mechanical strains, which essentially affect on the band structure of semiconductor components of thermoelectric converters and which must be considered both at the discussion of general issues of the kinetics of the electron gas in semiconductor crystals, and in the concrete solution of problems related with the direct conversion of thermal energy into electricity.
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