Abstract
Effect of the ambipolar mobility variation on the double injection is investigated for the compensated semiconductors with deep single-level traps in the case where the lifetime variation is weak on the average in the sample and quasineutrality approximation can be used. The conditions are found under which the negative resistance (NR) arises due to the increase of the ambipolar mobility and the lifetime in a long sample. The mechanism of the appearance of the NR in the bulk of the relatively short samples is discussed. NR arises because of the increase of the effective length of the injected carrier penetration into the sample due to joint action of the diffusion and of the ambipolar drift. [Russian Text Ignored]
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