Abstract
In this study, the temperature dependence of the dielectric properties, conductivity and resistivity of metal-insulator-semiconductor (MIS) structures have been investigated using capacitance (C) and conductance (G/@w) measurements in wide temperature range of 120-400K at 1MHz. Calculation of the dielectric constant (@e'), dielectric loss (@e''), loss tangent (tan @d), ac conductivity (@sac), ac resistivity (@rac) and the real and imaginary parts of electric modulus (M' and M'') were given in the studied temperature range. The values of the @e', @e'' and @sac increase exponentially with the increasing temperature between 280K and 400K. On the other hand, these values remain almost constant between 120K and 240K. In addition, the experimental dielectric data have been analyzed by considering electric modulus formalism. The [email protected]ac vs. 1000/T plot shows two linear regions with different slopes which correspond to low (120-240K) and high (280-400K) temperature ranges. The values of activation energy for two different conduction mechanisms were found as 4meV and 201meV for low and high temperature ranges, respectively.
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