On the Property and Origin of Paramagnetic Defects in Amorphous Ge–S and Ge–S–Ag

Abstract

Assignment of paramagnetic defects in amorphous Go–S has been carried out through computer fitting and annealing experiments. The glass structure of Ge–S has large randomness and is not stable in air, but the reduction of the randomness and the stabilization are brought about by addition of a small amount of Ag. Paramagnetic defects in Ge–S glasses are explained by energy overlapping between one electron state of singly occupied dangling bonds and one electron state of a second electron in doubly occupied dangling bonds due to large randomness.