Abstract
In today’s voltage source converter HVDC solutions, insulated-gate bipolar transistors (IGBTs) are used exclusively, generally in module form where the modular multilevel converter is concerned; this entails a number of protective measures that increase complexity and cost. As we move to higher transmitted powers, the use of integrated gate-commutated thyristors (IGCTs) would allow both higher voltages and currents while simultaneously reducing losses, failure rates, and costs, as this paper tries to demonstrate by comparing current production IGCTs with both current module and press-pack IGBTs.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: IEEE Journal of Emerging and Selected Topics in Power Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
