Abstract
The excitation-level dependence of intensities of the luminescence bands with hνm=1.5133, 1.5141, and 1.5153 eV in semi-insulating GaAs crystals at 4.2 K was examined. The dependences obtained for all three bands are identical. The analysis of these results indicates that, in this material, the luminescence band with hνm=1.5133 eV is related to the annihilation of the exciton-impurity complexes D+X (excitons X being bound to ionized shallow donors D+).
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