Abstract
The ion fraction analysis of 4He+ ions backscattered from various faces of copper single crystals is performed by using time-of-flight (TOF) and electrostatic analyzer (ESA) low-energy ion scattering (LEIS) techniques. When an experiment that integrates over 2π azimuth (typical ESA-LEIS setup) is used, the yield of ions backscattered from the Cu(110) surface may be given by projectiles penetrated much deeper than just one or two monolayers. The threshold energy for reionization processes for 4He+ and Cu found earlier by TOF-LEIS is experimentally confirmed by ESA-LEIS.
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