Abstract
Nonequilibrium generation-recombination statistics are examined for the deep-depleted gated-diode structure. This structure eliminates the minority-carrier capture process and allows the competing emission process to dominate near the middle of the Si band gap. It is found that the steady-state occupancy function of the midgap interface traps deviates considerably from the Fermi–Dirac distribution which is applicable to the equilibrium situation. As a consequence of this deviation, rapid attenuation of the ac trap conductance with frequency for the midgap traps is predicted and experimentally verified. The ratio of electron to hole capture cross sections, R=σn/σp, has a pronounced influence on the trap energy associated with the onset of ‘‘pinning,’’ UTP=1/2(ln R).
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