Abstract
The results of a study of plasma oxidation of polysiloxanes, which are applied to multi‐layer resists or interconnection processes, are reported. It is clarified that the oxidation reaction of the polysiloxanes proceeds theoretically through diffusion. From measurement of the oxide thicknesses of several kinds of polysiloxane, thick oxide film is shown to be formed on polysiloxane with a small volume of side chains, of low density or high molecular weight. Further, the oxide thickness markedly increases with increasing oxygen pressure or decreasing bias voltage.
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