Abstract
The sputtering by charge exchange (CX) atoms off the diagnostic duct wall was suggested as the mechanism of deposit growth on diagnostic windows of fusion devices, or on the “first mirrors” in ITER. The rate of deposit growth was estimated as a balance between the deposition rate of wall material, D, and sputtering of the deposit already existing, S. For estimation, the dependencies of the sputtering yield on the projectile energy and incidence angle were used. It was found that the duct length to its diameter ratio, L/d, is an important parameter for deposit growth. The D value exceeds several times S value if L/d>2, but D/S is less than one in the case of a short duct, L/d≪1, and also in the case of the very long duct, L/d⩾10. Based on such a mechanism, a duct structure with diaphragms made of refractory metal was proposed to decrease significantly the rate of deposit growth.
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