On the Lifetime-Equivalent Defect Density: Properties, Application, and Pitfalls

Abstract

The basic idea, derivation, and definition of the lifetime-equivalent defect density (alternatively termed as effective, relative, or normalized defect density) in the context of studies on changes of bulk excess charge carrier lifetime in crystalline silicon is presented, and the general dependencies on injection and temperature are discussed. As the concept of lifetime-equivalent defect density is often applied to light-induced phenomena, the application to boron–oxygen-related light-induced degradation and regeneration is demonstrated by means of simulations, as well as the pitfalls, when other phenomena like iron–boron pairing/dissociation, light- and elevated-temperature-induced degradation and regeneration, or surface-related degradation are superimposed. Finally, the concept of lifetime-equivalent defect density is extended to surface phenomena.