Abstract
The aim of this work is to study the impact of silicon nitride deposition/treatment technologies on charge trap (CT) nonvolatile memory performances. The authors have found that the technology modifies the charge trapping behavior with a one to one correlation between write/erase and charge retention characteristics. In particular, they used rapid thermal chemical vapor deposition techniques to obtain films with different compositions, but they were not able to improve CT performances with respect to standard low pressure chemical vapor deposition (LPCVD). Besides, an in situ steam generated treatment applied to standard LPCVD silicon nitride modifies the film properties inducing a lower programming efficiency, but improving charge retention characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
