Abstract
<p class="zhengwen"><span lang="EN-GB">The analytical expressions for the densities of states for graphene formed on semiconducting substrates are obtained. The problem on the induced gap is studied thoroughly. It is shown, that graphene electronic spectrum according to the relation between the system’s parameters can contain two gaps or one gap, overlapping with the energy gap of substrate. The gaps width dependences on the coupling regimes (tight and weak) are obtained. Numerical estimations are fulfilled for the epitaxial graphene on 6H-SiC{0001}.</span></p>
Highlights
The unique properties of graphene are well-known and, of a large extent, theoretically based (see, e. g., (Castro Neto A.H., et al, 2008; Kotov V.N., et al, 2012; Falkovsky I.V. and Vassilevich D.V., 2012; Cooper D.R., et al, 2011; Wu Y.H., et al, 2010; Haas J., et al, 2008; Seyller Th., et al, 2008) and references therein)
As far as the authors know the data on the epitaxial graphene energy gaps available (Seyller Th., et al, 2008; Goler S., et al, 2013; Jayasekera T., et al, 2011; Zhou S.Y., et al, 2007; Mattausch A. and Pankratov O., 2007; Vitali L., et al, 2008; Pankratov O., et al, 2010; Kim S., et al, 2008; Huang B., et al, 2011) are very contradictory and display Δ from zero to Eg
For the graphene on the C-face of SiC papers (Zhou S.Y., et al, 2007; Mattausch A. and Pankratov O., 2007) give the Dirac point position at 0.4 eV below the Fermi level, while in this value is equal to 0.3 eV and in (Emtsev K.V., et al, 2008; Berger C., et al, 2006) to 0.2 eV
Summary
The unique properties of graphene are well-known and, of a large extent, theoretically based (see, e. g., (Castro Neto A.H., et al, 2008; Kotov V.N., et al, 2012; Falkovsky I.V. and Vassilevich D.V., 2012; Cooper D.R., et al, 2011; Wu Y.H., et al, 2010; Haas J., et al, 2008; Seyller Th., et al, 2008) and references therein). The silicon carbide substrates 6H{0001} and 4H{0001} are used most often, since thermodesorption of silicon atoms from these surfaces leads to the formation of the graphene film (Haas J., et al, 2008; Seyller Th., et al, 2008). The results of such a process are critically depended from what face (Si or C) silicon atoms desorption has taken place (Mathieu C., et al, 2011; Srivastava N., et al, 2012; Goler S., et al, 2013; Jayasekera T., et al, 2011; Deretzis I. and La Magna A., 2011). In the most part of the studies it is demonstrated that the graphene monolayer only weakly bound with substrate is formed
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