Abstract
Recently, an elastic softening at low temperatures has been observed in Si by an ultrasonic measurement. By assuming that an intrinsic defect of vacancy causes this softening, which is suggested by the experiment, the effects of monovacancy on the elastic properties have been theoretically studied. The primal concern of this paper is to survey existence of a low-energy excitation, which would be expected commonly for such an abnormal behavior. Although the static ground-state of monovacancy is stiff owing to the strong Jahn-Teller distortion, it is found that a low-energy excitation really exists in the motion of the neighboring Si atoms surrounding the vacancy.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
