Abstract
Lowering the carrier concentration is presented as a way to considerably improve the performance of self-switching diode (SSD) detectors. A physics-based theoretical model was used to derive an expression for the responsivity of SSDs as a function of carrier concentration, mobility, and design parameters. Monte Carlo simulations confirmed the modeled effect of varying carrier concentration and channel width. SSDs were fabricated in InAs heterostructures with different δ-doping levels. Radio frequency (RF) characterization at 50 GHz reproduced the modeled trends. By reducing the carrier concentration in InAs SSDs with 40 nm wide channels from 2.7 × 1012 cm−2 to 1.5 × 1012 cm−2 (−44%), the noise equivalent power (NEP) improved from 130 pW/Hz½ to 87 pW/Hz½ (−33%).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
