Abstract
The distribution of carriers and change of potential has been investigated in the interior of a semiconductor considered semi-infinite, when on the surface minority carriers of arbitrary distribution have been generated. The results have been obtained for the case of not too strong generation in the form of exact integrals. As a special case the light-spot diameter dependence of the photovoltage for the generation by circular light spot has been calculated. According to measurements it is possible to determine the inner recombination and the surface recombination velocity.
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