Abstract
Reverse halo implantation (RHI), for the first time, is introduced and used to fabricate MOSFETs. It was demonstrated that RHI can dramatically improve short-channel effect, which can be used to enhance MOSFET performance, improve process control, or reduce stand-by power consumption. Implantation damage of RHI to gate oxide is negligible. The method of RHI is economic and suitable for massive manufacturing of very large scale integration
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
