Abstract
The accuracy of compensation for acceptor impurities in semi-conductors by the lithium ion drift technique is shown to be dependent upon the acceptor distribution. Exact compensation can only be achieved if the acceptor concentration, N A, is uniform or alternatively if the applied drifting field is orthogonal to grad N A. Detailed calculations have been made for two geometries, planar and coaxial, when the acceptor concentration has a linear gradient in the direction of drift. The imbalance in the compensation and its effect are discussed.
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