Abstract
The resistive switching phenomenon is attributed to local formation and rupture of conductive filaments (CF), however some aspects of the switching mechanism still need wider consensus. The origin of resistance contribution to low resistance state (LRS) and high resistance state (HRS) is although well known, the origin of capacitive contribution to the memory state of resistive random access memory device (RRAM) is ambiguous. Here we report impedance spectroscopic studies carried on Cu/TiO2/Pt devices to address the origin of resistive and capacitive contribution, where the effect of DC bias voltage, reset stop voltage and set compliance current on the impedance of RRAM memory states were investigated in detail. The studies revealed that the capacitive contribution was dominated by the surrounding TiO2 bulk and contrary to existing knowledge, gap formed owing to ruptured CF has negligible role. These studies also reaffirmed the origin of the resistive contribution to the HRS and LRS state, which was dictated by the ruptured gap and connected CF, respectively. Results of this study may be significant towards improving the switching time and operating frequency performance of futuristic memory, RF switch and neuromorphic computing applications of RRAM devices.
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