Abstract
Vacancy-related defects in Si are explored with deep level transient spectroscopy (DLTS). The measurements are performed on-line on irradiated p-type Si and a new trap with the signature (Epa, σpa) = (0.18 eV, 6.5×10-15 cm2) – only present at cryogenic temperatures – is studied. Furthermore, the bi-stable boron-vacancy complex is studied and it’s configuration at low temperatures is investigated and found to have the signature (Epa, σpa) = (0.11 eV, 8.2×10-15 cm2).
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