Abstract
The doping inhomogeneities in phosphorus doped (n-type) silicon crystals, prepared by the conventional zone- melting techniques, can be reduced drastically by accomplishing doping through nuclear transmutation of silicon. Details of the method are given for obtaining homogeneous and controlled phosphorus concentrations in Si crystals used especially for manufacturing high-power devices like thyristors and rectifiers. Factors influencing the final resistivity distribution in irradiated crystals have been discussed.
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