Abstract
Off-state gate current of n-channel MOSFET's with OX, RONO, N2ON, and N2OG oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N2OG oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, the method of nitridizing pre-grown thermal oxide (N2ON) is more feasible than directly growing oxide in N 2O ambient (N2OG) in view of gate current leakage, especially in leakage-sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc..
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
