Abstract
Off-state gate current of n-channel MOSFET's with OX, RONO, N2ON, and N2OG oxides as gate dielectrics was investigated in this work. It is revealed that gate current conduction mechanism in low field region is very different for these oxides. Enhanced conductivity is observed in RONO and N2OG oxides, which is attributed to the trap-assisted tunneling mechanism. Therefore, the method of nitridizing pre-grown thermal oxide (N2ON) is more feasible than directly growing oxide in N 2O ambient (N2OG) in view of gate current leakage, especially in leakage-sensitive applications, such as very-low-power battery-based circuits, DRAM cells, etc..
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