Abstract
Unique correlations between the electrical and optical characteristics of InGaN∕(In)GaN multiple quantum-well light-emitting diodes (LEDs) were investigated over a broad range of temperatures. The dependence of nonunity ideality factors extracted from the current-voltage analysis on temperature determines the carrier-transport mechanisms in the heterodevices. The pseudotemperatures To for the LEDs with multiquantum barriers and with GaN barriers were found to be 945 and 1385K, respectively, at temperatures of 180–300K while having values of 1195 and 2720K below about 180K. Correspondingly, the temperature-dependent electroluminescence observations suggest that the To anomaly caused the spectral intensity to deteriorate.
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Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
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