Abstract
The liquid encapsulated Czochralski method has been used to grow InP doped with compensating sulfur (donor) and zinc (acceptor) impurities. This double doping technique was previously found to allow low dislocation densities to be achieved with independent control of net free carrier concentration. Double doped crystals have been studied by transmission electron microscopy (TEM). The crystals were largely free of microscopic defects. Defects, when seen, were in the form of tangles of dislocations of up to one micron in length. No precipitates were seen. The presence of sulfur in the InP may be increasing the solubility of zinc in the lattice over what it would be if zinc doping were used alone.
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