Abstract
Auger electron spectroscopy in conjunction with ion sputter profiling was used to study the physical distribution and chemistry of aluminum, silicon and oxygen at the interface between sputter-deposited aluminum films and SiO 2 substrates. It is expected from thermodynamic considerations that the aluminum will reduce the SiO 2 wherever the two are in direct contact, leaving Al 2O 3 and free silicon. We describe the capabilities of this experimental technique in the analysis of the reaction. Our observations of the atomic percentages of the solid state reaction products and their variation with distance through the interface show that the reduction does occur, that it results in regions with up to approximately 10% free silicon and Al 2O 3 and that the reaction products are distributed over a layer approximately 400 Å thick.
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