Abstract
We report on the observation of universal exponent in a high mobility GaAs/AlGaAs two-dimensional electron system. The inverses of the half-widths of the conductivity peaks in the transition regions between integer quantum Hall states obey the temperature ( T)-dependent power law, T − κ , with the same exponent κ obtained earlier from low mobility InGaAs/InP samples. This result is made possible by subtracting the effect of edge state conduction from the measured data and obtaining the conductivity of only the topmost bulk Landau level. These results support the universal nature of the delocalization-localization transition in the integer quantum Hall effect in high mobility samples (> 10 6 cm 2/Vs).
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