Abstract
Very high two-dimensional hole gas (2DHG) drift mobility of 3100cm2∕Vs is obtained at extremely high density of 41×1011cm−2 in the modulation doped, 20nm thick, strained Ge quantum well (QW) of SiGe heterostructure at room temperature. Very high 2DHG density is achieved by increasing the boron modulation doping, reducing the spacer layer thickness located between it and Ge QW, and increasing the valence-band offset of Ge QW, which also results in the enhancement of mobility. The obtained 2DHG mobility and carrier density exceed those reported for two-dimensional electron gas in the strained Si QW of SiGe heterostructures.
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