Abstract
Photocurrent multiplication has been observed in a-Si:H basis p/a-SiN/i/n junction photocells. As a result of optimizations of the device structure, an external quantum efficiency exceeding 70 has been obtained so far under the reverse biased operation voltage 30V. From a systematic investigation of the photocurrent characteristics, it has been inferred that the excess component of the current arises from the real-space interband tunneling across the a-SiN:H layer.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
