Abstract
Non-contact scanning nonlinear dielectric microscopy (NC-SNDM) operated under ultrahigh vacuum (UHV) conditions was developed. This microscopy enables the simultaneousmeasurement of the topography and dielectric properties of a specimen. For electricallyconductive materials, the tunnelling current is also measurable. The atomic structure ofSi(111)7 × 7 was successfully resolved using this new SNDM technique. This is the first report on theachievement of atomic resolution in capacitance measurements.
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