Observation of the integer quantum Hall effect in high quality, uniform wafer-scale epitaxial graphene films

Abstract

We report the observation of the integer quantum Hall states at Landau level fillings of ν=2, 6, and 10 in a Hall bar device made of a single-layer epitaxial graphene film on the silicon-face of silicon-carbide prepared via argon-assisted graphitization. The two-dimensional electron gas exhibits a low-temperature (at 4 K) carrier mobility of ∼14 000 cm2/V s at the electron density of 6.1×1011 cm−2. Furthermore, the sheet resistance obtained from four-probe measurements across the whole area (12×6 mm2) of another specimen grown under similar condition displays roughly uniform values (∼1600 Ω/square), suggesting that the macroscopic steps and accompanying multilayer graphene domains play a minor role in the low-temperature electronic transport.