Abstract
Observation of surface symmetry change with etching reaction for the Si(111)/XeF2 and Si(111)/Cl2 systems has been demonstrated using second-harmonic generation (SHG) is reported. SHG output decays quickly with spontaneous XeF2 etching because of the formation of a SiFx reaction layer. Surface symmetry is broken by 1–2 langmuir exposure to XeF2 and recovered by ohmic heating to 800 °C. SHG output also decays quickly with exposure to Cl2. However, surface symmetry seems to remain after 20 langmuir exposure to Cl2 and SHG output is recovered by ohmic heating to 1000 °C.
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