Abstract
Epitaxial growth of A-A and A-B stacking MoS2 on WS2 via a two-step chemical vapor deposition method is reported. These epitaxial heterostructures show an atomic clean interface and a strong interlayer coupling, as evidenced by systematic characterization. Low-frequency Raman breathing and shear modes are observed in commensurate stacking bilayers for the first time; these can serve as persuasive fingerprints for interfacial quality and stacking configurations.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
