Abstract
AbstractNegative static charge and induced internal electric field have often been observed in the interfaces between silicon and high‐κ dielectrics, for example Al2O3 and HfO2. The electric field provides either beneficial (e.g., field‐effect passivation) or harmful (e.g., voltage instability) effect depending on the application. Different intrinsic and extrinsic defects in the dielectric film and interface have been suggested to cause the static charge but this issue is still unresolved. Here spectroscopic evidence is presented for a structural change in the interfaces where static charge is present. The observed correlation between the Si core‐level shift and static negative charge reveals the role of Si bonding environment modification in the SiO2 phase. The result is in good agreement with recent theoretical models, which relate the static charge formation to interfacial atomic transformations together with the resulting acceptor doping of SiO2.
Highlights
Si/high-κ interface can induce a static charge in the material.[4,5,6,7,8] In many applications, the interface charge is con-High-κ dielectric materials, for example, Al2O3 and HfO2, sidered harmful
We have investigated the static charge formation in the Si/high-κ interface
Highresolution HAXPES measurement reveals a separate Si oxide component, which correlates with the formation of the negative static charge
Summary
Si/high-κ interface can induce a static charge in the material.[4,5,6,7,8] In many applications, the interface charge is con-. High-κ dielectric materials, for example, Al2O3 and HfO2, sidered harmful. It is utilized and developed are widely used in silicon-based electronic components to passivate silicon solar cells and other state-of-the-art photonic devices in which the internal electric field is used. K. Kokko Department of Physics and Astronomy University of Turku Turku FI-20014, Finland to repel charge carriers deeper into Si bulk away from surface defects.[9,10,11] Several explanations, for example, crystal defects, broken bonds, and local charge distributions, have been presented to explain the static charge forma-. X-ray photoelectron spectroscopy (HAXPES) and by ab initio calculations
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