Abstract
We employed a cross correlation method to study current noise in phosphorescent organic light-emitting diodes. The noise spectra revealed two frequency-dependent components. The first component displays \({1/f}^{1.3}\) dependence and correlates with the light emission of the devices. The second component is dominant in low-bias regime and varies as \({1/f}^{2.8}\) . It is attributed to inhomogeneities of the barrier height at metal/organic interface. The extended bandwidth of the method allowed us to resolve frequency-independent term in the noise power, which was dominated by the shot noise. At bias voltages from 2.4 to 2.5 V, the Fano factor characterizing shot noise is close to one, confirming that the electron transport in this regime is limited by the carrier injection across metal/organic interface. At higher biases, in the regime where the transport is bulk-limited, the Fano factors drops to 0.5. Possible physical reasons for such behavior are discussed.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
