Abstract
Understanding and controlling of plasma-induced surface reactions are quite important for developing the future plasma processing including thin film deposition. We used “in-situ”, “real-time” infrared absorption spectroscopy in multiple internal reflection geometry (MIR-IRAS), to elucidate the mechanism of plasma-induced surface reactions during plasma enhanced chemical vapor deposition of amorphous carbon film. We examined the influence of substrate temperature on the surface reaction process, by analyzing infrared absorption spectra of Si surfaces during deposition of amorphous carbon film. We found that the deposition rate and the growth mode drastically change with varying the substrate temperature. We suggest that at low substrate temperature the film growth depends predominantly on the gas phase reaction, while at high temperature the film growth mode depends on the surface reaction as well as the gas phase reactions.
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