Abstract
Anomalous current–voltage behaviors, such as negative differential resistance (NDR) and current hysteresis, are observed in the room-temperature current–voltage (I-V) curves of InGaN/GaN multiple-quantum-well light-emitting diodes. It is found that the NDR can be observed in the positive voltage range of the I-V curve only when the samples are pretreated with a negative voltage before sweeping, and the NDR disappears permanently after an over-current treatment. The dependence of the NDR upon the negative voltage and sweeping conditions leads to the conclusion that a variation of the charging state of the defect-induced hole traps is responsible for the anomalous I-V behaviors. Therefore, NDR is excluded as a feature of the tunneling transport mechanism, especially in GaN-based devices with a high defect density.
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Schedule a callMore From: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
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