Abstract
Graphical abstractDisplay Omitted Highlights? Amorphous titanium oxide films have been prepared by Sol-gel method. ? Reproducible BRS behavior with ON/OFF ratio nearly three orders has been obtained. ? An unique multi-step conducting state has been observed in sol-gel derived Al/a-TiO2/ITO stacked structure. In the present study, fabrication of memory devices using sol-gel derived amorphous titanium oxide (a-TiO2) thin films and its characterization are presented. Titanium oxide thin films of thickness 50nm were deposited on ITO substrates using a spin coating method. The films annealed at 200?C for an hour in air atmosphere have shown good transparency in visible region. Bipolar resistive switching behaviors of Al/a-TiO2/ITO stacked structures were investigated using current-voltage characteristics. The observed current-voltage characteristics have described the bipolar resistive switching property of a-TiO2 films. Multi-step conductance behavior has been observed in this Al/a-TiO2/ITO stacked structures and its mechanism has been analyzed.
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