Abstract
Spontaneous formation of step-edge Ge quantum wires and lateral quantum confinement effect are clearly observed in Si submonolayer-Ge/Si heterostructures grown on Si(100). By depositing submonolayer equivalent Ge (Q), the Ge atoms are found to line up in a wire-like fashion at the 〈01̄1〉 step edges as revealed by plan-view transmission electron microscopy. Photoluminescence (PL) peak energy shift with Q due to lateral quantum confinement of holes is clearly observed, and PL features characteristic of the quasi-one-dimensional system are also addressed.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
