Abstract
A pronounced hump structure at about −5 V in the high-frequency capacitance-voltage (C-V) curve of an undoped InGaN/GaN heterostructure is observed and this hump weakens gradually with decreasing measurement frequency, indicating the occurrence of an inversion behavior in the InGaN/GaN heterostructure. The inversion behavior in the C-V curve is attributed to hole accumulation at the heterointerface where a hole well is formed due to the strong piezoelectric polarization effect in the InGaN/GaN heterostructure. The acceptor traps related to Ga vacancies in the InGaN layer are thought to be the source of the minority carriers. The theoretical calculation of band diagram of the InGaN/GaN heterostructure confirms the formation of the hole well at the heterointerface and supports the behavior of hole accumulation under negative bias voltage.
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