Abstract
The effect of nanoparticle incorporation inside reduced graphene oxide (rGO) layers on the electrical transport properties has been investigated by temperature-dependent resistivity measurements on rGO and rGO-zinc selenide (rGO-ZnSe) thin films in a wide temperature range of 84–473 K. The fraction of ZnSe in rGO-ZnSe composite has been varied from 26 to 98%. Resistance curve derivative analysis reveals a conduction mechanism consistent with Mott two-dimensional (2D) variable range hopping (VRH) in rGO films, whereas different rGO-ZnSe samples exhibit three-dimensional (3D) VRH at lower temperatures (84–280 K). At higher temperatures (290–473 K), Arrhenius-like transport was observed for all of the samples. A model where ZnSe nanoparticles are incorporated inside wrinkled rGO layers to facilitate interlayer connections, thus 3D charge transport, has been proposed. Room-temperature carrier mobility values, calculated using trap-free space charge limited current conduction model in the dark, reach a maximum...
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