Abstract
We present the first data on the change in tunnel current in a triple barrier resonant tunnelling diode (TBRTD) due to a pulse of nonequilibrium acoustic phonons. The change in current as a function of voltage Δ I( V) maps out two satellite peaks which occur either side of the first resonant voltage. The satellite peak which occurs at a lower voltage than the first resonance is attributed to assisted tunnelling from the emitter to the lowest bound state in the wells via acoustic phonon absorption. The peak which occurs at a higher bias voltage than the first resonance is attributed to assisted tunnelling via stimulated phonon emission from the emitter level to the lowest bound state in the quantum wells.
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