Abstract
A high resistance ferromagnetic oxide Fe 2⋅5Mn 0⋅5O 4 (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al–O/Ni 80Fe 20, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT.
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